AP4N2R6J - аналоги и даташиты транзистора

 

AP4N2R6J - Даташиты. Аналоги. Основные параметры


   Наименование производителя: AP4N2R6J
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 104 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 63 ns
   Cossⓘ - Выходная емкость: 720 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0026 Ohm
   Тип корпуса: TO251

 Аналог (замена) для AP4N2R6J

 

AP4N2R6J Datasheet (PDF)

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 ap4n2r6j.pdf pdf_icon

AP4N2R6J

AP4N2R6J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description G D S TO-251(J) AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced P

 7.1. Size:162K  ape
 ap4n2r6amt.pdf pdf_icon

AP4N2R6J

AP4N2R6AMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 40V D Simple Drive Requirement RDS(ON) 2.6m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP4N2R6A series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 7.2. Size:111K  ape
 ap4n2r6p.pdf pdf_icon

AP4N2R6J

AP4N2R6P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated desi

 7.3. Size:242K  ape
 ap4n2r6h.pdf pdf_icon

AP4N2R6J

AP4N2R6H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement D BVDSS 40V Ultra-low On-resistance RDS(ON) 2.6m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description G AP4604 series arefrom Advanced Power innovated design AP4N2R6 seriesare fromAdvanced Power innovated d

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP4N4R2H , AP4N3R6P , AP4N3R6H , AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT , 13N50 , AP4N2R6H , AP4N2R6AMT , AP4N1R8CMT-A , AP4N1R1CDT-A , AP4820AGYT , AP4804MT , AP4800N2 , AP4618CDT .

 

 
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