AP4N1R8CMT-A Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP4N1R8CMT-A  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 55 nS

Cossⓘ - Capacitancia de salida: 960 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm

Encapsulados: PMPAK5X6

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AP4N1R8CMT-A datasheet

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AP4N1R8CMT-A

AP4N1R8CMT-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 45V D Simple Drive Requirement RDS(ON) 1.8m Ultra Low On-resistance ID4 180A G RoHS Compliant & Halogen-Free D S D D Description D AP4N1R8C series are from Advanced Power innovated design and silicon process technology to achieve

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AP4N1R8CMT-A

AP4N1R1CDT-A Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 45V D 100% Rg & UIS Test RDS(ON) 1.15m Ultra Low On-resistance ID4 265A G RoHS Compliant & Halogen-Free S Description PDFN 5x6 D D D D AP4N1R1C series are from Advanced Power innovated design and silicon process technology to a

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AP4N1R8CMT-A

AP4N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP4N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I = 3.8A DS D R

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AP4N1R8CMT-A

AP4N15MI 150V N-Channel Enhancement Mode MOSFET Description The AP4N15MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =4A DS D R

MOSTRAR MÁS

Otros transistores... AP4N3R2MT, AP4N3R2I, AP4N2R6S, AP4N2R6P, AP4N2R6MT, AP4N2R6J, AP4N2R6H, AP4N2R6AMT, 5N65, AP4N1R1CDT-A, AP4820AGYT, AP4804MT, AP4800N2, AP4618CDT, AP4610P, AP4608S, AP4608P