All MOSFET. AP4N1R8CMT-A Datasheet

 

AP4N1R8CMT-A Datasheet and Replacement


   Type Designator: AP4N1R8CMT-A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 960 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0018 Ohm
   Package: PMPAK5X6
 

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AP4N1R8CMT-A Datasheet (PDF)

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AP4N1R8CMT-A

AP4N1R8CMT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 45VD Simple Drive Requirement RDS(ON) 1.8m Ultra Low On-resistance ID4 180AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP4N1R8C series are from Advanced Power innovated design andsilicon process technology to achieve

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AP4N1R8CMT-A

AP4N1R1CDT-AHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 45VD 100% Rg & UIS Test RDS(ON) 1.15m Ultra Low On-resistance ID4 265AG RoHS Compliant & Halogen-FreeSDescription PDFN 5x6D D D DAP4N1R1C series are from Advanced Power innovated designand silicon process technology to a

Datasheet: AP4N3R2MT , AP4N3R2I , AP4N2R6S , AP4N2R6P , AP4N2R6MT , AP4N2R6J , AP4N2R6H , AP4N2R6AMT , 4435 , AP4N1R1CDT-A , AP4820AGYT , AP4804MT , AP4800N2 , AP4618CDT , AP4610P , AP4608S , AP4608P .

History: ZXM64N035L3 | IRF7478PBF-1 | HMS60N10D | PK5G6EA | FDS6680S | HGP070N15S | STN4260

Keywords - AP4N1R8CMT-A MOSFET datasheet

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