AP4800N2 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4800N2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: DFN2X2
Búsqueda de reemplazo de MOSFET AP4800N2
Principales características: AP4800N2
ap4800n2.pdf
AP4800N2 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant Product S Top view D D D S Description D S AP4800 series are from Advanced Power innovated design and silicon proc
ap4800gm.pdf
AP4800GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 25V D D Fast Switching D RDS(ON) 18m D Simple Drive Requirement ID 9A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of
ap4800dgm-hf.pdf
AP4800DGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 18m D Fast Switching Characteristic ID 9A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fas
ap4800gyt-hf.pdf
AP4800GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device design, low on-resis
Otros transistores... AP4N2R6MT , AP4N2R6J , AP4N2R6H , AP4N2R6AMT , AP4N1R8CMT-A , AP4N1R1CDT-A , AP4820AGYT , AP4804MT , IRF530 , AP4618CDT , AP4610P , AP4608S , AP4608P , AP4606P , AP4604P , AP4604IN , AP4604I .
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