AP4800N2 Todos los transistores

 

AP4800N2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4800N2
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.4 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
   Paquete / Cubierta: DFN2X2
     - Selección de transistores por parámetros

 

AP4800N2 Datasheet (PDF)

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 ap4800n2.pdf pdf_icon

AP4800N2

AP4800N2Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant ProductSTop viewDD D SDescriptionDSAP4800 series are from Advanced Power innovated design andsilicon proc

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 ap4800gm.pdf pdf_icon

AP4800N2

AP4800GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 18m DSimple Drive Requirement ID 9A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of

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 ap4800dgm-hf.pdf pdf_icon

AP4800N2

AP4800DGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 18mD Fast Switching Characteristic ID 9AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fas

 8.3. Size:95K  ape
 ap4800gyt-hf.pdf pdf_icon

AP4800N2

AP4800GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device design, low on-resis

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: G11 | AUIRF7734M2 | CEF05N6 | AM2336N-T1 | DMP1096UCB4 | SMOS44N80

 

 
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