AP4800N2 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP4800N2
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2.4 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 9 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 19 nS
Cossⓘ - Capacitancia de salida: 105 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Paquete / Cubierta: DFN2X2
Búsqueda de reemplazo de AP4800N2 MOSFET
AP4800N2 Datasheet (PDF)
ap4800n2.pdf

AP4800N2Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant ProductSTop viewDD D SDescriptionDSAP4800 series are from Advanced Power innovated design andsilicon proc
ap4800gm.pdf

AP4800GMPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETLow On-Resistance BVDSS 25V DDFast Switching D RDS(ON) 18m DSimple Drive Requirement ID 9A GSSSO-8SDescriptionDDThe Advanced Power MOSFETs from APEC provide thedesigner with the best combination of
ap4800dgm-hf.pdf

AP4800DGM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 18mD Fast Switching Characteristic ID 9AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fas
ap4800gyt-hf.pdf

AP4800GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13AGSDDDescriptionDAdvanced Power MOSFETs from APEC provide theDdesigner with the best combination of fast switching,ruggedized device design, low on-resis
Otros transistores... AP4N2R6MT , AP4N2R6J , AP4N2R6H , AP4N2R6AMT , AP4N1R8CMT-A , AP4N1R1CDT-A , AP4820AGYT , AP4804MT , AO4407 , AP4618CDT , AP4610P , AP4608S , AP4608P , AP4606P , AP4604P , AP4604IN , AP4604I .
History: AP50WN750I
History: AP50WN750I



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