AP4800N2 Datasheet. Equivalente

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 ap4800n2.pdf

AP4800N2 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant Product S Top view D D D S Description D S AP4800 series are from Advanced Power innovated design and silicon proc

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 ap4800gm.pdf

AP4800GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 25V D D Fast Switching D RDS(ON) 18m D Simple Drive Requirement ID 9A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of

 8.2. Size:94K  ape
 ap4800dgm-hf.pdf

AP4800DGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 18m D Fast Switching Characteristic ID 9A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fas

 8.3. Size:95K  ape
 ap4800gyt-hf.pdf

AP4800GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device design, low on-resis

 8.4. Size:223K  ape
 ap4800gem.pdf

AP4800GEM Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D D Fast Switching Characteristic RDS(ON) 18m D Low On-resistance ID 9.2A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP4800 series are from Advanced Power innovated design and G silicon process technolog

 8.5. Size:93K  ape
 ap4800agm.pdf

AP4800AGM RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D D Fast Switching Characteristic ID 9.6A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de

 8.6. Size:93K  ape
 ap4800agm-hf.pdf

AP4800AGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D D Fast Switching Characteristic ID 9.6A G RoHS Compliant S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 8.7. Size:57K  ape
 ap4800cgm-hf.pdf

AP4800CGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 14m D Fast Switching Characteristic ID 10.4A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 8.8. Size:94K  ape
 ap4800bgm-hf.pdf

AP4800BGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D D Fast Switching Characteristic ID 9.6A G RoHS Compliant S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,