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AP4800N2 Spec and Replacement


   Type Designator: AP4800N2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN2X2

 AP4800N2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP4800N2 Specs

 ..1. Size:615K  ape
ap4800n2.pdf pdf_icon

AP4800N2

AP4800N2 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant Product S Top view D D D S Description D S AP4800 series are from Advanced Power innovated design and silicon proc... See More ⇒

 8.1. Size:80K  ape
ap4800gm.pdf pdf_icon

AP4800N2

AP4800GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 25V D D Fast Switching D RDS(ON) 18m D Simple Drive Requirement ID 9A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of ... See More ⇒

 8.2. Size:94K  ape
ap4800dgm-hf.pdf pdf_icon

AP4800N2

AP4800DGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 18m D Fast Switching Characteristic ID 9A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fas... See More ⇒

 8.3. Size:95K  ape
ap4800gyt-hf.pdf pdf_icon

AP4800N2

AP4800GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device design, low on-resis... See More ⇒

Detailed specifications: AP4N2R6MT , AP4N2R6J , AP4N2R6H , AP4N2R6AMT , AP4N1R8CMT-A , AP4N1R1CDT-A , AP4820AGYT , AP4804MT , IRF530 , AP4618CDT , AP4610P , AP4608S , AP4608P , AP4606P , AP4604P , AP4604IN , AP4604I .

Keywords - AP4800N2 MOSFET specs

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