AP4800N2 Datasheet. Specs and Replacement
Type Designator: AP4800N2 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 105 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: DFN2X2
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AP4800N2 substitution
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AP4800N2 datasheet
ap4800n2.pdf
AP4800N2 Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Fast Switching Characteristic G RDS(ON) 18m Small Size & Lower Profile ID 9A Halogen Free & RoHS Compliant Product S Top view D D D S Description D S AP4800 series are from Advanced Power innovated design and silicon proc... See More ⇒
ap4800gm.pdf
AP4800GM Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-Resistance BVDSS 25V D D Fast Switching D RDS(ON) 18m D Simple Drive Requirement ID 9A G S S SO-8 S Description D D The Advanced Power MOSFETs from APEC provide the designer with the best combination of ... See More ⇒
ap4800dgm-hf.pdf
AP4800DGM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30V D D D Simple Drive Requirement RDS(ON) 18m D Fast Switching Characteristic ID 9A G S RoHS Compliant & Halogen-Free S S SO-8 D Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fas... See More ⇒
ap4800gyt-hf.pdf
AP4800GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Lower Profile RDS(ON) 13m RoHS Compliant ID 13A G S D D Description D Advanced Power MOSFETs from APEC provide the D designer with the best combination of fast switching, ruggedized device design, low on-resis... See More ⇒
Detailed specifications: AP4N2R6MT, AP4N2R6J, AP4N2R6H, AP4N2R6AMT, AP4N1R8CMT-A, AP4N1R1CDT-A, AP4820AGYT, AP4804MT, IRF530, AP4618CDT, AP4610P, AP4608S, AP4608P, AP4606P, AP4604P, AP4604IN, AP4604I
Keywords - AP4800N2 MOSFET specs
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History: AP6C036M | AFN8918
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