AP4563AGH Todos los transistores

 

AP4563AGH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4563AGH
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.13 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 18 nS
   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: TO252-4L

 Búsqueda de reemplazo de MOSFET AP4563AGH

 

Principales características: AP4563AGH

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ap4563agh.pdf pdf_icon

AP4563AGH

AP4563AGH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 20m Fast Switching Performance ID 9.6A S1 RoHS Compliant & Halogen-Free P-CH BVDSS -40V G1 S2 RDS(ON) 36m G2 Description ID -7.3A TO-252-4L Advanced Power MOSFETs from

 0.1. Size:119K  ape
ap4563agh-hf.pdf pdf_icon

AP4563AGH

AP4563AGH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 20m Fast Switching Performance ID 9.6A S1 RoHS Compliant & Halogen-Free P-CH BVDSS -40V G1 S2 RDS(ON) 36m G2 Description ID -7.3A TO-252-4L D1 D2 Advanced Power MOSFE

 8.1. Size:136K  ape
ap4563gh.pdf pdf_icon

AP4563AGH

AP4563GH-HF Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D1/D2 Good Thermal Performance RDS(ON) 30m Fast Switching Performance ID 8A S1 G1 S2 RoHS Compliant P-CH BVDSS -40V G2 RDS(ON) 36m TO-252-4L Description ID -7.3A Advanced Power MOSFETs from APEC provide the de

 8.2. Size:84K  ape
ap4563gm.pdf pdf_icon

AP4563AGH

AP4563GM Pb Free Plating Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 40V D2 D2 Fast Switching Performance RDS(ON) 30m D1 D1 RoHS Compliant ID 6.7A G2 P-CH BVDSS -40V S2 G1 S1 SO-8 RDS(ON) 36m Description ID -6A The Advanced Power MOSFETs from APEC provide the designer with the best

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History: SVD9Z24NT | SST70R380S2

 

 
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