AP4455GYT Todos los transistores

 

AP4455GYT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4455GYT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 10.6 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 6 nS
   Cossⓘ - Capacitancia de salida: 280 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: PMPAK3X3

 Búsqueda de reemplazo de MOSFET AP4455GYT

 

Principales características: AP4455GYT

 ..1. Size:112K  ape
 ap4455gyt.pdf pdf_icon

AP4455GYT

AP4455GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6A G D S D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device de

 0.1. Size:59K  ape
 ap4455gyt-hf.pdf pdf_icon

AP4455GYT

AP4455GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Small Size & Lower Profile RDS(ON) 21m RoHS Compliant & Halogen-Free ID -10.6A G D S D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedized device de

 7.1. Size:49K  ape
 ap4455geh-hf.pdf pdf_icon

AP4455GYT

AP4455GEH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D Lower On-resistance RDS(ON) 21m G Fast Switching Characteristic ID -35A RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide

 7.2. Size:95K  ape
 ap4455gmt-hf.pdf pdf_icon

AP4455GYT

AP4455GMT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D SO-8 Compatible RDS(ON) 17.5m Lower Gate Charge ID -38.6A G RoHS Compliant & Halogen-Free S D Description D D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ruggedi

MOSTRAR MÁS

Otros transistores... AP4608P , AP4606P , AP4604P , AP4604IN , AP4604I , AP4604AI , AP4563GH , AP4563AGH , 2SK3568 , AP4453H , AP4453GYT , AP4438GYT , AP4409GEP , AP4036AGYT , AP4034GH , AP4028GEMT , AP4028EYT .

History: SDF02N20 | ZVNL110ASTOB | IPA60R180P7S | PSMN6R4-30MLD | MTP4N90 | PT9435 | ZVN3310FTA

 

 
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