AP4438GYT Todos los transistores

 

AP4438GYT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP4438GYT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.57 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 13.7 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5 nS
   Cossⓘ - Capacitancia de salida: 125 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: PMPAK3X3
 

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AP4438GYT Datasheet (PDF)

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 ap4438gyt.pdf pdf_icon

AP4438GYT

AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAP4438 series are from Advanced Power innovated design and siliconprocess technology to achieve the lowest possible on-r

 0.1. Size:59K  ape
 ap4438gyt-hf.pdf pdf_icon

AP4438GYT

AP4438GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Lower Profile RDS(ON) 12m RoHS Compliant & Halogen-Free ID 13.7AGSDDDescriptionDDAdvanced Power MOSFETs from APEC provide the designer with thebest combination of fast switching, ruggedized device desi

 7.1. Size:59K  ape
 ap4438gsm-hf.pdf pdf_icon

AP4438GYT

AP4438GSM-HFHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODE Simple Drive Requirement BVDSS 30VDDD Good Recovery Time RDS(ON) 11.5mD Fast Switching Performance ID 11.7AGS RoHS Compliant & Halogen-FreeSSO-8SDDescriptionAdvanced Power MOSFETs from APEC provide theSchottky Diodedesigner with the best co

 7.2. Size:94K  ape
 ap4438gm-hf.pdf pdf_icon

AP4438GYT

AP4438GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 30VDDD Simple Drive Requirement RDS(ON) 11.5mD Fast Switching Characteristic ID 11.8AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

MOSTRAR MÁS

Otros transistores... AP4604IN , AP4604I , AP4604AI , AP4563GH , AP4563AGH , AP4455GYT , AP4453H , AP4453GYT , SKD502T , AP4409GEP , AP4036AGYT , AP4034GH , AP4028GEMT , AP4028EYT , AP4028EJB , AP4028EH , AP4024GEMT .

History: IRFP9233

 

 
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