AP3R303GMT-L Todos los transistores

 

AP3R303GMT-L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3R303GMT-L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: PMPAK5X6L

 Búsqueda de reemplazo de MOSFET AP3R303GMT-L

 

Principales características: AP3R303GMT-L

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 ap3r303gmt-l.pdf pdf_icon

AP3R303GMT-L

AP3R303GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free S D D Description D D AP3R303 series are from Advanced Power innovated design and silicon process technology to achie

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 ap3r303gmt-hf.pdf pdf_icon

AP3R303GMT-L

AP3R303GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID 105A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

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 ap3r303gmt.pdf pdf_icon

AP3R303GMT-L

AP3R303GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free S D D Description D D AP3R303 series are from Advanced Power innovated design and silicon process technology to achi

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