All MOSFET. AP3R303GMT-L Datasheet

 

AP3R303GMT-L Datasheet and Replacement


   Type Designator: AP3R303GMT-L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 31 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 440 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
   Package: PMPAK5X6L
 

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AP3R303GMT-L Datasheet (PDF)

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 ap3r303gmt-l.pdf pdf_icon

AP3R303GMT-L

AP3R303GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAP3R303 series are from Advanced Power innovated design and siliconprocess technology to achie

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 ap3r303gmt-hf.pdf pdf_icon

AP3R303GMT-L

AP3R303GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID 105AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge

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 ap3r303gmt.pdf pdf_icon

AP3R303GMT-L

AP3R303GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAP3R303 series are from Advanced Power innovated design and siliconprocess technology to achi

Datasheet: AP4028EYT , AP4028EJB , AP4028EH , AP4024GEMT , AP4024EYT , AP4024EJB , AP4024EH , AP3R604GMT-L , RU6888R , AP3R303GMT , AP3P9R0I , AP3N1R7CYT , AP3P2R2CDT , AP3NR68CDT , AP2604CDT , AP3P010YT , AP3N018EYT .

History: SI7455DP

Keywords - AP3R303GMT-L MOSFET datasheet

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