AP3R303GMT-L Datasheet. Specs and Replacement

Type Designator: AP3R303GMT-L  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 31 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.5 nS

Cossⓘ - Output Capacitance: 440 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm

Package: PMPAK5X6L

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AP3R303GMT-L datasheet

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AP3R303GMT-L

AP3R303GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free S D D Description D D AP3R303 series are from Advanced Power innovated design and silicon process technology to achie... See More ⇒

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 ap3r303gmt-hf.pdf pdf_icon

AP3R303GMT-L

AP3R303GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID 105A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒

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 ap3r303gmt.pdf pdf_icon

AP3R303GMT-L

AP3R303GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free S D D Description D D AP3R303 series are from Advanced Power innovated design and silicon process technology to achi... See More ⇒

Detailed specifications: AP4028EYT, AP4028EJB, AP4028EH, AP4024GEMT, AP4024EYT, AP4024EJB, AP4024EH, AP3R604GMT-L, AO3400A, AP3R303GMT, AP3P9R0I, AP3N1R7CYT, AP3P2R2CDT, AP3NR68CDT, AP2604CDT, AP3P010YT, AP3N018EYT

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