AP3R303GMT-L Spec and Replacement
Type Designator: AP3R303GMT-L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 31 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 440 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: PMPAK5X6L
AP3R303GMT-L Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP3R303GMT-L Specs
ap3r303gmt-l.pdf
AP3R303GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free S D D Description D D AP3R303 series are from Advanced Power innovated design and silicon process technology to achie... See More ⇒
ap3r303gmt-hf.pdf
AP3R303GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID 105A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒
ap3r303gmt.pdf
AP3R303GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free S D D Description D D AP3R303 series are from Advanced Power innovated design and silicon process technology to achi... See More ⇒
Detailed specifications: AP4028EYT , AP4028EJB , AP4028EH , AP4024GEMT , AP4024EYT , AP4024EJB , AP4024EH , AP3R604GMT-L , AO3400A , AP3R303GMT , AP3P9R0I , AP3N1R7CYT , AP3P2R2CDT , AP3NR68CDT , AP2604CDT , AP3P010YT , AP3N018EYT .
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