AP3R303GMT Todos los transistores

 

AP3R303GMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3R303GMT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 31 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 5.5 nS
   Cossⓘ - Capacitancia de salida: 440 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: PMPAK5X6
 

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AP3R303GMT Datasheet (PDF)

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 ap3r303gmt.pdf pdf_icon

AP3R303GMT

AP3R303GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAP3R303 series are from Advanced Power innovated design and siliconprocess technology to achi

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 ap3r303gmt-l.pdf pdf_icon

AP3R303GMT

AP3R303GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAP3R303 series are from Advanced Power innovated design and siliconprocess technology to achie

 0.2. Size:96K  ape
 ap3r303gmt-hf.pdf pdf_icon

AP3R303GMT

AP3R303GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID 105AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge

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History: CS630FA9H | NTMFS4823NT1G | 2SK1629-E1-E | AOW15S60 | MIC94050YM4TR | 7N60L-T2Q-T | STY130NF20D

 

 
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