AP3R303GMT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3R303GMT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 31 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 440 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm

Encapsulados: PMPAK5X6

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AP3R303GMT datasheet

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AP3R303GMT

AP3R303GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free S D D Description D D AP3R303 series are from Advanced Power innovated design and silicon process technology to achi

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AP3R303GMT

AP3R303GMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free S D D Description D D AP3R303 series are from Advanced Power innovated design and silicon process technology to achie

 0.2. Size:96K  ape
 ap3r303gmt-hf.pdf pdf_icon

AP3R303GMT

AP3R303GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID 105A G RoHS Compliant S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

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