AP3R303GMT MOSFET. Datasheet pdf. Equivalent
Type Designator: AP3R303GMT
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 31 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13.3 nC
trⓘ - Rise Time: 5.5 nS
Cossⓘ - Output Capacitance: 440 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033 Ohm
Package: PMPAK5X6
AP3R303GMT Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP3R303GMT Datasheet (PDF)
ap3r303gmt.pdf
AP3R303GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAP3R303 series are from Advanced Power innovated design and siliconprocess technology to achi
ap3r303gmt-l.pdf
AP3R303GMT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeSDDDescriptionDDAP3R303 series are from Advanced Power innovated design and siliconprocess technology to achie
ap3r303gmt-hf.pdf
AP3R303GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V SO-8 Compatible with Heatsink RDS(ON) 3.3m Low On-resistance ID 105AG RoHS CompliantSDDDescriptionDDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,rugge
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NP80N055MLE
History: NP80N055MLE
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