AP3800YT Todos los transistores

 

AP3800YT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3800YT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 10.3 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 105 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0108 Ohm

Encapsulados: PMPAK3X3

 Búsqueda de reemplazo de AP3800YT MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP3800YT datasheet

 ..1. Size:212K  ape
ap3800yt.pdf pdf_icon

AP3800YT

AP3800YT Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D1 Simple Drive Requirement CH-1 BVDSS 30V Easy for Synchronous Buck RDS(ON) 10.8m G1 Converter Application ID3 10.3A D2/S1 RoHS Compliant & Halogen-Free CH-2 BVDSS 30V RDS(ON) 8.5m G2 Description ID3 12.7A S2 Advanced Power MOSFETs from APEC provide the de

 9.1. Size:181K  ape
ap38028em.pdf pdf_icon

AP3800YT

AP38028EM Halogen-Free Product Advanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET D2 Simple Drive Requirement BVDSS 30V D2 D1 Low On-resistance RDS(ON) 28m D1 Fast Switching Performance ID 6.6A G2 S2 RoHS Compliant & Halogen-Free G1 S1 SO-8 Description AP38028E series are from Advanced Power innovated design D1 D2 and silicon pro

 9.2. Size:59K  ape
ap3801gm.pdf pdf_icon

AP3800YT

AP3801GM Pb Free Plating Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 70m D Fast Switching Characteristic ID -5A G RoHS Compliant S S SO-8 S Description D The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 9.3. Size:92K  ape
ap3801gm-hf.pdf pdf_icon

AP3800YT

AP3801GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D Low Gate Charge RDS(ON) 70m D Fast Switching Characteristic ID -5A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast

Otros transistores... AP3P9R0I , AP3N1R7CYT , AP3P2R2CDT , AP3NR68CDT , AP2604CDT , AP3P010YT , AP3N018EYT , AP3C030YT , IRFB7545 , AP3700YT , AP2P9R0LYT , AP2N3R7LYT , AP2609GYT , AP15TP1R0YT , AP10TN028YT , AP0903GYT , AP3P7R0EMT .

History: JMPF7N65BJ | SMG2330N

 

 

 


History: JMPF7N65BJ | SMG2330N

🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

ncep028n85 datasheet | sw50n06 | 2sa1232 | 2sc1940 | ftp08n06a | 2n3405 | 2n3567 | 2sc1226

 

 

↑ Back to Top
.