AP10TN028YT Todos los transistores

 

AP10TN028YT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10TN028YT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 7.5 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 6 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: PMPAK3X3

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AP10TN028YT datasheet

 ..1. Size:184K  ape
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AP10TN028YT

AP10TN028YT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Size & Lower Profile RDS(ON) 28m RoHS Compliant & Halogen-Free ID 7.5A G S D D Description D D AP10TN028 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on

 5.1. Size:163K  ape
ap10tn028mt.pdf pdf_icon

AP10TN028YT

AP10TN028MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 28m Lower Gate Charge ID 21A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN028 series are from Advanced Power innovated design and silicon process technology to achieve the

 7.1. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

AP10TN028YT

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the

 7.2. Size:161K  ape
ap10tn004cmt.pdf pdf_icon

AP10TN028YT

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog

Otros transistores... AP3N018EYT , AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT , AP2N3R7LYT , AP2609GYT , AP15TP1R0YT , AOD4184A , AP0903GYT , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , AP3NR85CMT , AP3N7R2MT , AP3N3R3MT , AP3N2R8MT .

History: RZF030P01 | AP16T10GH | SIJ470DP | SMG2319P | IPD60R600P7 | BTS247Z | 2SK3646-01SJ

 

 

 

 

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