Справочник MOSFET. AP10TN028YT

 

AP10TN028YT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP10TN028YT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 3.125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.5 A
   trⓘ - Время нарастания: 6 ns
   Cossⓘ - Выходная емкость: 185 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: PMPAK3X3
     - подбор MOSFET транзистора по параметрам

 

AP10TN028YT Datasheet (PDF)

 ..1. Size:184K  ape
 ap10tn028yt.pdf pdf_icon

AP10TN028YT

AP10TN028YTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Size & Lower Profile RDS(ON) 28m RoHS Compliant & Halogen-Free ID 7.5AGSDDDescriptionDDAP10TN028 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on

 5.1. Size:163K  ape
 ap10tn028mt.pdf pdf_icon

AP10TN028YT

AP10TN028MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 28m Lower Gate Charge ID 21AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN028 series are from Advanced Power innovated designand silicon process technology to achieve the

 7.1. Size:163K  ape
 ap10tn010cmt.pdf pdf_icon

AP10TN028YT

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

 7.2. Size:161K  ape
 ap10tn004cmt.pdf pdf_icon

AP10TN028YT

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: P0460EI | KI2310DS | PMN27XPEA | NTHD4502N | IPP08CNE8NG | HGK220N25S | BLS60R380F-P

 

 
Back to Top

 


 
.