AP0903GYT Todos los transistores

 

AP0903GYT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP0903GYT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 16 A

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 215 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm
   Paquete / Cubierta: PMPAK3X3
     - Selección de transistores por parámetros

 

AP0903GYT Datasheet (PDF)

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 ap0903gyt.pdf pdf_icon

AP0903GYT

AP0903GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer withthe best combination of fast switching, rugge

 0.1. Size:95K  ape
 ap0903gyt-hf.pdf pdf_icon

AP0903GYT

AP0903GYT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,

 7.1. Size:95K  ape
 ap0903gm-hf.pdf pdf_icon

AP0903GYT

AP0903GM-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 8.5mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of

 7.2. Size:168K  ape
 ap0903gm.pdf pdf_icon

AP0903GYT

AP0903GM-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30VDDD Simple Drive Requirement RDS(ON) 8.5mD Fast Switching Characteristic ID 13.3AGS RoHS Compliant & Halogen-FreeSSSO-8DescriptionDAP0903 series are from

MOSTRAR MÁS

Otros transistores... AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT , AP2N3R7LYT , AP2609GYT , AP15TP1R0YT , AP10TN028YT , 5N50 , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , AP3NR85CMT , AP3N7R2MT , AP3N3R3MT , AP3N2R8MT , AP3N2R4MT .

History: IXTP50N28T | 3SK249

 

 
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