AP0903GYT Todos los transistores

 

AP0903GYT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP0903GYT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 16 A

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 215 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.009 Ohm

Encapsulados: PMPAK3X3

 Búsqueda de reemplazo de AP0903GYT MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP0903GYT datasheet

 ..1. Size:111K  ape
ap0903gyt.pdf pdf_icon

AP0903GYT

AP0903GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16A G RoHS Compliant & Halogen-Free S D D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge

 0.1. Size:95K  ape
ap0903gyt-hf.pdf pdf_icon

AP0903GYT

AP0903GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16A G RoHS Compliant & Halogen-Free S D D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching,

 7.1. Size:95K  ape
ap0903gm-hf.pdf pdf_icon

AP0903GYT

AP0903GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8.5m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of

 7.2. Size:168K  ape
ap0903gm.pdf pdf_icon

AP0903GYT

AP0903GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8.5m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP0903 series are from

Otros transistores... AP3C030YT , AP3800YT , AP3700YT , AP2P9R0LYT , AP2N3R7LYT , AP2609GYT , AP15TP1R0YT , AP10TN028YT , AO4407A , AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , AP3NR85CMT , AP3N7R2MT , AP3N3R3MT , AP3N2R8MT , AP3N2R4MT .

 

 

 


🌐 : EN  ES  РУ

social

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10

 

 

 

Popular searches

2sc1226 | 2sd180 | 2sd235 | k3502 datasheet | p0903bdg datasheet | 2sa722 | f1010e mosfet datasheet | 2sa566

 

 

↑ Back to Top
.