AP3P010AMT Todos los transistores

 

AP3P010AMT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3P010AMT
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 18.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 500 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: PMPAK5X6
 

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AP3P010AMT Datasheet (PDF)

 ..1. Size:162K  ape
 ap3p010amt.pdf pdf_icon

AP3P010AMT

AP3P010AMTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS -30VD Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58A RoHS Compliant & Halogen-Free GSDDescriptionDDAP3P010A series are from Advanced Power innovated design andDsilicon process technology to achiev

 7.1. Size:137K  ape
 ap3p010yt.pdf pdf_icon

AP3P010AMT

AP3P010YTHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge BVDSS -30VD Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID -14.6A RoHS Compliant & Halogen-Free GSDDDescriptionDAdvanced Power MOSFETs from APEC provide the designer with theDbest combination of fast switching,

 7.2. Size:67K  ape
 ap3p010h.pdf pdf_icon

AP3P010AMT

AP3P010HHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% UIS Test D BVDSS -30V Simple Drive Requirement RDS(ON) 10m Fast Switching Characteristic ID -58AG RoHS Compliant & Halogen-FreeSDescriptionGAP3P010 series are from Advanced Power innovated design andDSsilicon process technology to achieve the lowes

 7.3. Size:186K  ape
 ap3p010m.pdf pdf_icon

AP3P010AMT

AP3P010MHalogen-Free ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Low Gate Charge D BVDSS -30V Fast Switching Characteristic RDS(ON) 10m Simple Drive Requirement ID3 -13.3AG RoHS Compliant & Halogen-FreeSDescriptionDDAP3P010 series are from Advanced Power innovated design and siliconDDprocess technology to achieve t

MOSTRAR MÁS

Otros transistores... AP2P9R0LYT , AP2N3R7LYT , AP2609GYT , AP15TP1R0YT , AP10TN028YT , AP0903GYT , AP3P7R0EMT , AP3P3R0MT , IRFP064N , AP3NR85CMT , AP3N7R2MT , AP3N3R3MT , AP3N2R8MT , AP3N2R4MT , AP3N2R2MT , AP3N1R8MT-L , AP3N1R8MT .

History: IXFV110N25TS | 8N80G-TF1-T | UTT75N08 | 2SK2495 | IRFU9220PBF | VBMB165R20 | AM40P03-20D

 

 
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