AP3N2R4MT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AP3N2R4MT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 57 nC
   trⓘ - Tiempo de subida: 77 nS
   Cossⓘ - Capacitancia de salida: 1120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0024 Ohm
   Paquete / Cubierta: PMPAK5X6

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AP3N2R4MT Datasheet (PDF)

..1. Size:162K ape
ap3n2r4mt.pdf

AP3N2R4MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.4m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R4 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

8.1. Size:167K ape
ap3n2r8p.pdf

AP3N2R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power innovated designa

8.2. Size:163K ape
ap3n2r2mt.pdf

AP3N2R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

8.3. Size:78K ape
ap3n2r2mt-l.pdf

AP3N2R2MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceDG RoHS Compliant & Halogen-FreeDDSDDescriptionAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

8.4. Size:161K ape
ap3n2r8mt.pdf

AP3N2R8MTHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED 100% Rg & UIS Test BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Ultra Low On-resistance ID4 105A RoHS Compliant & Halogen-FreeGDDDDescription SDAP3N2R8 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

8.5. Size:206K ape
ap3n2r8h.pdf

AP3N2R8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSGDescriptionDSTO-252(H)AP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power

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