AP3N2R2MT Todos los transistores

 

AP3N2R2MT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3N2R2MT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 38 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 59 nS

Cossⓘ - Capacitancia de salida: 1320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm

Encapsulados: PMPAK5X6

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AP3N2R2MT datasheet

 ..1. Size:163K  ape
 ap3n2r2mt.pdf pdf_icon

AP3N2R2MT

AP3N2R2MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N2R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

 0.1. Size:78K  ape
 ap3n2r2mt-l.pdf pdf_icon

AP3N2R2MT

AP3N2R2MT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistance D G RoHS Compliant & Halogen-Free D D S D Description AP3N2R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest

 8.1. Size:167K  ape
 ap3n2r8p.pdf pdf_icon

AP3N2R2MT

AP3N2R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N2R8 seriesare fromAdvanced Power innovated design a

 8.2. Size:162K  ape
 ap3n2r4mt.pdf pdf_icon

AP3N2R2MT

AP3N2R4MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 2.4m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N2R4 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

MOSTRAR MÁS

Otros transistores... AP3P7R0EMT , AP3P3R0MT , AP3P010AMT , AP3NR85CMT , AP3N7R2MT , AP3N3R3MT , AP3N2R8MT , AP3N2R4MT , 20N60 , AP3N1R8MT-L , AP3N1R8MT , AP3N1R7MT , AP3N1R0MT , AP3D5R0MT , AP3C023AMT , AP3A010MT , AP3A010AMT .

History: DMP6023LE | BTS282Z | JMSH2010PE | SVS20N60PND2 | SVF13N50T

 

 

 

 

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