AP3N2R2MT Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: AP3N2R2MT
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 5 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 38 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 75 nC
trⓘ - Время нарастания: 59 ns
Cossⓘ - Выходная емкость: 1320 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0022 Ohm
Тип корпуса: PMPAK5X6
AP3N2R2MT Datasheet (PDF)
ap3n2r2mt.pdf

AP3N2R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
ap3n2r2mt-l.pdf

AP3N2R2MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceDG RoHS Compliant & Halogen-FreeDDSDDescriptionAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest
ap3n2r8p.pdf

AP3N2R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power innovated designa
ap3n2r4mt.pdf

AP3N2R4MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.4m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R4 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: NTD4810N-1G | BRCS120N10SZC | SSP5N90A | MSK4N80T
History: NTD4810N-1G | BRCS120N10SZC | SSP5N90A | MSK4N80T



Список транзисторов
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