AP3N1R7MT Todos los transistores

 

AP3N1R7MT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3N1R7MT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 43.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 59 nS

Cossⓘ - Capacitancia de salida: 1320 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0017 Ohm

Encapsulados: PMPAK5X6

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AP3N1R7MT datasheet

 ..1. Size:163K  ape
 ap3n1r7mt.pdf pdf_icon

AP3N1R7MT

AP3N1R7MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 1.7m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N1R7 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

 7.1. Size:63K  ape
 ap3n1r7cyt.pdf pdf_icon

AP3N1R7MT

AP3N1R7CYT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30V D Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-Free G S D D Description D D AP3N1R7C series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resi

 8.1. Size:68K  1
 ap3n1r8mt.pdf pdf_icon

AP3N1R7MT

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

 8.2. Size:205K  ape
 ap3n1r8p.pdf pdf_icon

AP3N1R7MT

AP3N1R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N1R8 seriesare fromAdvanced Power innovated

MOSTRAR MÁS

Otros transistores... AP3NR85CMT , AP3N7R2MT , AP3N3R3MT , AP3N2R8MT , AP3N2R4MT , AP3N2R2MT , AP3N1R8MT-L , AP3N1R8MT , 50N06 , AP3N1R0MT , AP3D5R0MT , AP3C023AMT , AP3A010MT , AP3A010AMT , AP3700MT , AP2C016LMT , AP2606CMT .

History: HM4441 | SMG2305 | JMSL0315ARD | APT10026L2LL | BSZ0908ND | FDB045AN08A0-F085 | 2SK1669

 

 

 

 

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