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AP3N1R7MT MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP3N1R7MT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 43.2 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 59 ns
   Cossⓘ - Выходная емкость: 1320 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0017 Ohm
   Тип корпуса: PMPAK5X6

 Аналог (замена) для AP3N1R7MT

 

 

AP3N1R7MT Datasheet (PDF)

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 ap3n1r7mt.pdf

AP3N1R7MT AP3N1R7MT

AP3N1R7MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 1.7m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N1R7 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

 7.1. Size:63K  ape
 ap3n1r7cyt.pdf

AP3N1R7MT AP3N1R7MT

AP3N1R7CYTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD Small Size & Ultra_Low RDS(ON) RDS(ON) 1.88m RoHS Compliant & Halogen-FreeGSDDDescriptionDDAP3N1R7C series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on-resi

 8.1. Size:68K  1
 ap3n1r8mt.pdf

AP3N1R7MT AP3N1R7MT

AP3N1R8MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andDsilicon process technology to achieve the

 8.2. Size:205K  ape
 ap3n1r8p.pdf

AP3N1R7MT AP3N1R7MT

AP3N1R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N1R8 seriesare fromAdvanced Power innovated

 8.3. Size:163K  ape
 ap3n1r8mt.pdf

AP3N1R7MT AP3N1R7MT

AP3N1R8MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andDsilicon process technology to achieve the

 8.4. Size:163K  ape
 ap3n1r0mt.pdf

AP3N1R7MT AP3N1R7MT

AP3N1R0MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 1.05m Ultra Low On-resistance ID4 245AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N1R0 series are from Advanced Power innovated design andsilicon process technology to achieve the

 8.5. Size:319K  ape
 ap3n1r8mt-l.pdf

AP3N1R7MT AP3N1R7MT

AP3N1R8MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andsilicon process technology to achieve th

Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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