AP3A010MT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3A010MT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.57 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 14.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9 nS
Cossⓘ - Capacitancia de salida: 180 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0105 Ohm
Paquete / Cubierta: PMPAK5X6
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AP3A010MT Datasheet (PDF)
ap3a010mt.pdf
AP3A010MTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 D1 D2 D2 Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.5m RoHS Compliant & Halogen-FreeD1D1D2DescriptionD2S1 G1 S2 G2AP3A010 series are from Advanced Power innovateddesign and silicon process technology to achieve the
ap3a010am.pdf
AP3A010AMHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 30VD2D1 Low On-resistance RDS(ON) 10.4mD1 Fast Switching Performance ID 10.8AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP3A010A series are from Advanced Power innovated designD2D1and silicon
ap3a010amt.pdf
AP3A010AMTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 D1 D2 D2 Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.4m RoHS Compliant & Halogen-FreeD1D1D2DescriptionD2S1 G1 S2 G2AP3A010A series are from Advanced Power innovateddesign and silicon process technology to achieve th
ap3a020y.pdf
AP3A020YHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 30VD2 Low Gate Charge RDS(ON) 20mD1D1G2 Fast Switching Performance ID3 6.5AS2 RoHS Compliant & Halogen-FreeG1S12928-8DescriptionAP3A020 series are from Advanced Power innovated designD2D1and silicon pro
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: SSF2627
History: SSF2627
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918