AP10TN028MT Todos los transistores

 

AP10TN028MT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10TN028MT

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 9.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm

Encapsulados: PMPAK5X6

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AP10TN028MT datasheet

 ..1. Size:163K  ape
ap10tn028mt.pdf pdf_icon

AP10TN028MT

AP10TN028MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 28m Lower Gate Charge ID 21A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN028 series are from Advanced Power innovated design and silicon process technology to achieve the

 5.1. Size:184K  ape
ap10tn028yt.pdf pdf_icon

AP10TN028MT

AP10TN028YT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Size & Lower Profile RDS(ON) 28m RoHS Compliant & Halogen-Free ID 7.5A G S D D Description D D AP10TN028 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on

 7.1. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

AP10TN028MT

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the

 7.2. Size:161K  ape
ap10tn004cmt.pdf pdf_icon

AP10TN028MT

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog

Otros transistores... AP3A010AMT , AP3700MT , AP2C016LMT , AP2606CMT , AP2602MT , AP1A003GMT , AP10TN5R5MT , AP10TN5R5LMT , AON6414A , AP10TN012LMT , AP10TN010CMT , AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT .

History: SGM2305A | HM1404D | BRFL20N65 | 2SK3109-ZJ

 

 

 


History: SGM2305A | HM1404D | BRFL20N65 | 2SK3109-ZJ

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