AP10TN028MT Todos los transistores

 

AP10TN028MT MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10TN028MT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 9.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: PMPAK5X6
 

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AP10TN028MT Datasheet (PDF)

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 ap10tn028mt.pdf pdf_icon

AP10TN028MT

AP10TN028MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 28m Lower Gate Charge ID 21AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN028 series are from Advanced Power innovated designand silicon process technology to achieve the

 5.1. Size:184K  ape
 ap10tn028yt.pdf pdf_icon

AP10TN028MT

AP10TN028YTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Size & Lower Profile RDS(ON) 28m RoHS Compliant & Halogen-Free ID 7.5AGSDDDescriptionDDAP10TN028 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on

 7.1. Size:163K  ape
 ap10tn010cmt.pdf pdf_icon

AP10TN028MT

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

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 ap10tn004cmt.pdf pdf_icon

AP10TN028MT

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

MOSTRAR MÁS

Otros transistores... AP3A010AMT , AP3700MT , AP2C016LMT , AP2606CMT , AP2602MT , AP1A003GMT , AP10TN5R5MT , AP10TN5R5LMT , IRFB4110 , AP10TN012LMT , AP10TN010CMT , AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT .

History: BUK964R2-60E | H7N1004DS | SDF054JAA-U | LNB4N80 | RQ6C050UN | OSG65R340DZF | HGK039N08S

 

 
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