Справочник MOSFET. AP10TN028MT

 

AP10TN028MT Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP10TN028MT
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 5 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9.5 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 185 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.028 Ohm
   Тип корпуса: PMPAK5X6
     - подбор MOSFET транзистора по параметрам

 

AP10TN028MT Datasheet (PDF)

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 ap10tn028mt.pdf pdf_icon

AP10TN028MT

AP10TN028MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 28m Lower Gate Charge ID 21AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN028 series are from Advanced Power innovated designand silicon process technology to achieve the

 5.1. Size:184K  ape
 ap10tn028yt.pdf pdf_icon

AP10TN028MT

AP10TN028YTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Size & Lower Profile RDS(ON) 28m RoHS Compliant & Halogen-Free ID 7.5AGSDDDescriptionDDAP10TN028 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on

 7.1. Size:163K  ape
 ap10tn010cmt.pdf pdf_icon

AP10TN028MT

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

 7.2. Size:161K  ape
 ap10tn004cmt.pdf pdf_icon

AP10TN028MT

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

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History: IXTA80N10T | TK2P60D | DMP2104LP | IRFBG20

 

 
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