AP10TN010CMT Todos los transistores

 

AP10TN010CMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10TN010CMT
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 625 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.01 Ohm
   Paquete / Cubierta: PMPAK5X6

 Búsqueda de reemplazo de MOSFET AP10TN010CMT

 

Principales características: AP10TN010CMT

 ..1. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

AP10TN010CMT

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the

 6.1. Size:162K  ape
ap10tn012lmt.pdf pdf_icon

AP10TN010CMT

AP10TN012LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 12m Low On-resistance ID4 62A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN012L series are from Advanced Power innovated design and silicon process technology to achieve

 7.1. Size:161K  ape
ap10tn004cmt.pdf pdf_icon

AP10TN010CMT

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog

 7.2. Size:163K  ape
ap10tn004lcmt.pdf pdf_icon

AP10TN010CMT

AP10TN004LCMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004LC series are from Advanced Power innovated design and silicon process technology to ach

Otros transistores... AP2C016LMT , AP2606CMT , AP2602MT , AP1A003GMT , AP10TN5R5MT , AP10TN5R5LMT , AP10TN028MT , AP10TN012LMT , 2N7000 , AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT .

History: F10N80 | HM8205Q

 

 
Back to Top

 


History: F10N80 | HM8205Q

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP30H150K | AP30H150G | AP3065SD | AP3004S | AP3003 | AP3002S | AP2N65K | AP2716SD | AP2716QD | AP2716KD | AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q

 

 

 
Back to Top

 

Popular searches

oc84 | c6090 | ksa1015yta | 2n4240 | 2n5210 transistor | toshiba 2sc2290 | pk6d0ba mosfet | 2sd726

 


 
.