AP10TN010CMT PDF and Equivalents Search

 

AP10TN010CMT Specs and Replacement

Type Designator: AP10TN010CMT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 17 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 65 nS

Cossⓘ - Output Capacitance: 625 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: PMPAK5X6

AP10TN010CMT substitution

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AP10TN010CMT datasheet

 ..1. Size:163K  ape
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AP10TN010CMT

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the ... See More ⇒

 6.1. Size:162K  ape
ap10tn012lmt.pdf pdf_icon

AP10TN010CMT

AP10TN012LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 12m Low On-resistance ID4 62A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN012L series are from Advanced Power innovated design and silicon process technology to achieve ... See More ⇒

 7.1. Size:161K  ape
ap10tn004cmt.pdf pdf_icon

AP10TN010CMT

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog... See More ⇒

 7.2. Size:163K  ape
ap10tn004lcmt.pdf pdf_icon

AP10TN010CMT

AP10TN004LCMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004LC series are from Advanced Power innovated design and silicon process technology to ach... See More ⇒

Detailed specifications: AP2C016LMT, AP2606CMT, AP2602MT, AP1A003GMT, AP10TN5R5MT, AP10TN5R5LMT, AP10TN028MT, AP10TN012LMT, 2N7000, AP10TN008CMT, AP10TN004LCMT, AP10TN004CMT, AP10N012MT, AP0904GMT, AP0704GMT, AP0504GMT, AP0203GMT

Keywords - AP10TN010CMT MOSFET specs

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