AP10TN008CMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP10TN008CMT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 18.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 42 nS
Cossⓘ - Capacitancia de salida: 590 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0079 Ohm
Encapsulados: PMPAK5X6
Búsqueda de reemplazo de AP10TN008CMT MOSFET
- Selecciónⓘ de transistores por parámetros
AP10TN008CMT datasheet
ap10tn008cmt.pdf
AP10TN008CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN008C series are from Advanced Power innovated design and silicon process technology to achieve
ap10tn008cmt-l.pdf
AP10TN008CMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN008C series are from Advanced Power innovated design and silicon process technology to achie
ap10tn004cmt.pdf
AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog
ap10tn004lcmt.pdf
AP10TN004LCMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004LC series are from Advanced Power innovated design and silicon process technology to ach
Otros transistores... AP2606CMT , AP2602MT , AP1A003GMT , AP10TN5R5MT , AP10TN5R5LMT , AP10TN028MT , AP10TN012LMT , AP10TN010CMT , P55NF06 , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT , AP3N2R2MT-L .
History: SM104 | SUN0260D
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