AP10TN008CMT PDF and Equivalents Search

 

AP10TN008CMT Specs and Replacement

Type Designator: AP10TN008CMT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 42 nS

Cossⓘ - Output Capacitance: 590 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0079 Ohm

Package: PMPAK5X6

AP10TN008CMT substitution

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AP10TN008CMT datasheet

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 ap10tn008cmt.pdf pdf_icon

AP10TN008CMT

AP10TN008CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN008C series are from Advanced Power innovated design and silicon process technology to achieve... See More ⇒

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 ap10tn008cmt-l.pdf pdf_icon

AP10TN008CMT

AP10TN008CMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN008C series are from Advanced Power innovated design and silicon process technology to achie... See More ⇒

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 ap10tn004cmt.pdf pdf_icon

AP10TN008CMT

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog... See More ⇒

 6.2. Size:163K  ape
 ap10tn004lcmt.pdf pdf_icon

AP10TN008CMT

AP10TN004LCMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004LC series are from Advanced Power innovated design and silicon process technology to ach... See More ⇒

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Detailed specifications: AP2606CMT, AP2602MT, AP1A003GMT, AP10TN5R5MT, AP10TN5R5LMT, AP10TN028MT, AP10TN012LMT, AP10TN010CMT, P55NF06, AP10TN004LCMT, AP10TN004CMT, AP10N012MT, AP0904GMT, AP0704GMT, AP0504GMT, AP0203GMT, AP3N2R2MT-L

Keywords - AP10TN008CMT MOSFET specs

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