AP0504GMT MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP0504GMT
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 23.6 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7 nS
Cossⓘ - Capacitancia de salida: 340 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
Encapsulados: PMPAK5X6
Búsqueda de reemplazo de AP0504GMT MOSFET
- Selecciónⓘ de transistores por parámetros
AP0504GMT datasheet
ap0504gmt.pdf
AP0504GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75A G RoHS Compliant & Halogen-Free S D Description D AP0504 series are from Advanced Power inno
ap0504gmt.pdf
AP0504GMT www.VBsemi.tw N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ.) 100 % Rg and UIS Tested 0.0050 at VGS = 10 V 70 APPLICATIONS 40 67 nC 0.0060 at VGS = 4.5 V 65 Notebook PC Core VRM/POL D DFN5X6 Top View Top View Bottom View 1 8 2 7 3 6 G 4 5 PIN1 S N-Channel MOSFET A
ap0504gmt-hf.pdf
AP0504GMT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 40V SO-8 Compatible with Heatsink RDS(ON) 5.5m Low On-resistance ID 75A G RoHS Compliant & Halogen-Free S D D Description D D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switchin
ap0504gh-hf.pdf
AP0504GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 40V Simple Drive Requirement RDS(ON) 6.3m Fast Switching Characteristic ID 66A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the G D designer with the best combination of fast switching,
Otros transistores... AP10TN012LMT , AP10TN010CMT , AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AON7408 , AP0203GMT , AP3N2R2MT-L , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P .
History: 2SK3922-01 | S2N7002K | NCE60R360F | SGM3055 | BSC13DN30NSFD | HCFL65R380
History: 2SK3922-01 | S2N7002K | NCE60R360F | SGM3055 | BSC13DN30NSFD | HCFL65R380
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB062N08BG | AUB060N08AG | AUB056N10 | AUB056N08BGL | AUB050N085 | AUB050N055 | AUB045N12 | AUB045N10BT | AUB039N10 | AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10
Popular searches
2sd726 | c536 transistor equivalent | 2sa1294 datasheet | mp10b transistor | bc182b | 2n3054 transistor equivalent | 2n554 | 2sa1011
