AP3N2R2MT-L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP3N2R2MT-L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 5 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 38 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 59 nS
Cossⓘ - Capacitancia de salida: 1320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
Encapsulados: PMPAK5X6L
Búsqueda de reemplazo de AP3N2R2MT-L MOSFET
- Selecciónⓘ de transistores por parámetros
AP3N2R2MT-L datasheet
ap3n2r2mt-l.pdf
AP3N2R2MT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistance D G RoHS Compliant & Halogen-Free D D S D Description AP3N2R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest
ap3n2r2mt.pdf
AP3N2R2MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N2R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po
ap3n2r8p.pdf
AP3N2R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N2R8 seriesare fromAdvanced Power innovated design a
ap3n2r4mt.pdf
AP3N2R4MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 2.4m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N2R4 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po
Otros transistores... AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT , STP75NF75 , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI .
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