AP3N2R2MT-L Todos los transistores

 

AP3N2R2MT-L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3N2R2MT-L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 38 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 1320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0022 Ohm
   Paquete / Cubierta: PMPAK5X6L
 

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AP3N2R2MT-L Datasheet (PDF)

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AP3N2R2MT-L

AP3N2R2MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceDG RoHS Compliant & Halogen-FreeDDSDDescriptionAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

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AP3N2R2MT-L

AP3N2R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

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 ap3n2r8p.pdf pdf_icon

AP3N2R2MT-L

AP3N2R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power innovated designa

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 ap3n2r4mt.pdf pdf_icon

AP3N2R2MT-L

AP3N2R4MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.4m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R4 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

MOSTRAR MÁS

Otros transistores... AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT , SKD502T , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI .

History: 3N70G-TN3-R | NCE0103Y | SPN6561S26RGB

 

 
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