All MOSFET. AP3N2R2MT-L Datasheet

 

AP3N2R2MT-L Datasheet and Replacement


   Type Designator: AP3N2R2MT-L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 38 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 75 nC
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 1320 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0022 Ohm
   Package: PMPAK5X6L
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AP3N2R2MT-L Datasheet (PDF)

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 ap3n2r2mt-l.pdf pdf_icon

AP3N2R2MT-L

AP3N2R2MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceDG RoHS Compliant & Halogen-FreeDDSDDescriptionAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

 5.1. Size:163K  ape
 ap3n2r2mt.pdf pdf_icon

AP3N2R2MT-L

AP3N2R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

 8.1. Size:167K  ape
 ap3n2r8p.pdf pdf_icon

AP3N2R2MT-L

AP3N2R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power innovated designa

 8.2. Size:162K  ape
 ap3n2r4mt.pdf pdf_icon

AP3N2R2MT-L

AP3N2R4MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.4m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R4 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

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Datasheet: AP10TN008CMT , AP10TN004LCMT , AP10TN004CMT , AP10N012MT , AP0904GMT , AP0704GMT , AP0504GMT , AP0203GMT , IRF1010E , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , AP3N1R8P , AP3N020P , AP3P7R0EI .

History: STD4NK50Z-1 | GSM4946W | NCE1216 | 12N25 | CS7N65FA9D | BSP92P

Keywords - AP3N2R2MT-L MOSFET datasheet

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