AP3N2R8P Todos los transistores

 

AP3N2R8P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3N2R8P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 80 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 1030 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO220
 

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AP3N2R8P Datasheet (PDF)

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 ap3n2r8p.pdf pdf_icon

AP3N2R8P

AP3N2R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power innovated designa

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 ap3n2r8mt.pdf pdf_icon

AP3N2R8P

AP3N2R8MTHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED 100% Rg & UIS Test BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Ultra Low On-resistance ID4 105A RoHS Compliant & Halogen-FreeGDDDDescription SDAP3N2R8 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 7.2. Size:206K  ape
 ap3n2r8h.pdf pdf_icon

AP3N2R8P

AP3N2R8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSGDescriptionDSTO-252(H)AP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power

 8.1. Size:163K  ape
 ap3n2r2mt.pdf pdf_icon

AP3N2R8P

AP3N2R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

MOSTRAR MÁS

Otros transistores... AP0704GMT , AP0504GMT , AP0203GMT , AP3N2R2MT-L , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AO3400 , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H .

History: PHD9NQ20T | LNC06R230 | FHU2N60A | BUK9Y30-75B

 

 
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