AP3N2R8P Todos los transistores

 

AP3N2R8P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3N2R8P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 75 nS

Cossⓘ - Capacitancia de salida: 1030 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm

Encapsulados: TO220

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AP3N2R8P datasheet

 ..1. Size:167K  ape
ap3n2r8p.pdf pdf_icon

AP3N2R8P

AP3N2R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N2R8 seriesare fromAdvanced Power innovated design a

 7.1. Size:161K  ape
ap3n2r8mt.pdf pdf_icon

AP3N2R8P

AP3N2R8MT Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D 100% Rg & UIS Test BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Ultra Low On-resistance ID4 105A RoHS Compliant & Halogen-Free G D D D Description S D AP3N2R8 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 7.2. Size:206K  ape
ap3n2r8h.pdf pdf_icon

AP3N2R8P

AP3N2R8H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S G Description D S TO-252(H) AP4604 series arefrom Advanced Power innovated design AP3N2R8 seriesare fromAdvanced Power

 8.1. Size:163K  ape
ap3n2r2mt.pdf pdf_icon

AP3N2R8P

AP3N2R2MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N2R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

Otros transistores... AP0704GMT , AP0504GMT , AP0203GMT , AP3N2R2MT-L , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AO3401 , AP3N1R8P , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H .

 

 

 


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