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AP3N2R8P MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP3N2R8P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 125 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 80 A
   Tjⓘ - Максимальная температура канала: 175 °C
   Qgⓘ - Общий заряд затвора: 66 nC
   trⓘ - Время нарастания: 75 ns
   Cossⓘ - Выходная емкость: 1030 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0028 Ohm
   Тип корпуса: TO220

 Аналог (замена) для AP3N2R8P

 

 

AP3N2R8P Datasheet (PDF)

 ..1. Size:167K  ape
ap3n2r8p.pdf

AP3N2R8P
AP3N2R8P

AP3N2R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power innovated designa

 7.1. Size:161K  ape
ap3n2r8mt.pdf

AP3N2R8P
AP3N2R8P

AP3N2R8MTHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED 100% Rg & UIS Test BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Ultra Low On-resistance ID4 105A RoHS Compliant & Halogen-FreeGDDDDescription SDAP3N2R8 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 7.2. Size:206K  ape
ap3n2r8h.pdf

AP3N2R8P
AP3N2R8P

AP3N2R8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSGDescriptionDSTO-252(H)AP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power

 8.1. Size:163K  ape
ap3n2r2mt.pdf

AP3N2R8P
AP3N2R8P

AP3N2R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

 8.2. Size:162K  ape
ap3n2r4mt.pdf

AP3N2R8P
AP3N2R8P

AP3N2R4MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.4m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R4 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

 8.3. Size:78K  ape
ap3n2r2mt-l.pdf

AP3N2R8P
AP3N2R8P

AP3N2R2MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceDG RoHS Compliant & Halogen-FreeDDSDDescriptionAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest

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