AP3N1R8P Todos los transistores

 

AP3N1R8P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3N1R8P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 208.3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 70 nS

Cossⓘ - Capacitancia de salida: 2000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0018 Ohm

Encapsulados: TO220

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AP3N1R8P datasheet

 ..1. Size:205K  ape
 ap3n1r8p.pdf pdf_icon

AP3N1R8P

AP3N1R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120A G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N1R8 seriesare fromAdvanced Power innovated

 7.1. Size:68K  1
 ap3n1r8mt.pdf pdf_icon

AP3N1R8P

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

 7.2. Size:163K  ape
 ap3n1r8mt.pdf pdf_icon

AP3N1R8P

AP3N1R8MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D Description D AP3N1R8 series are from Advanced Power innovated design and D silicon process technology to achieve the

 7.3. Size:319K  ape
 ap3n1r8mt-l.pdf pdf_icon

AP3N1R8P

AP3N1R8MT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165A G RoHS Compliant & Halogen-Free S D D D Description D AP3N1R8 series are from Advanced Power innovated design and silicon process technology to achieve th

MOSTRAR MÁS

Otros transistores... AP0504GMT , AP0203GMT , AP3N2R2MT-L , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , K3569 , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H .

History: IRF7304PBF-1 | S2N7002K | NCE60R360F | RTR025N05FRA | SGM3055

 

 

 

 

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