Справочник MOSFET. AP3N1R8P

 

AP3N1R8P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP3N1R8P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 208.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 120 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   tr ⓘ - Время нарастания: 70 ns
   Cossⓘ - Выходная емкость: 2000 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0018 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для AP3N1R8P

   - подбор ⓘ MOSFET транзистора по параметрам

 

AP3N1R8P Datasheet (PDF)

 ..1. Size:205K  ape
 ap3n1r8p.pdf pdf_icon

AP3N1R8P

AP3N1R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.8m Fast Switching Characteristic ID4 120AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N1R8 seriesare fromAdvanced Power innovated

 7.1. Size:68K  1
 ap3n1r8mt.pdf pdf_icon

AP3N1R8P

AP3N1R8MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andDsilicon process technology to achieve the

 7.2. Size:163K  ape
 ap3n1r8mt.pdf pdf_icon

AP3N1R8P

AP3N1R8MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andDsilicon process technology to achieve the

 7.3. Size:319K  ape
 ap3n1r8mt-l.pdf pdf_icon

AP3N1R8P

AP3N1R8MT-LHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 1.89m Ultra Low On-resistance ID4 165AG RoHS Compliant & Halogen-FreeSDDDDescriptionDAP3N1R8 series are from Advanced Power innovated design andsilicon process technology to achieve th

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... AP0504GMT , AP0203GMT , AP3N2R2MT-L , AP10TN008CMT-L , AP0203GMT-L , AP3P7R0EP , AP3N4R0P , AP3N2R8P , SPP20N60C3 , AP3N020P , AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H .

History: 2SK447 | BSS84AKW | SI2313 | IXTH36P15P

 

 
Back to Top

 


 
.