AP3N4R5H Todos los transistores

 

AP3N4R5H MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3N4R5H
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 56.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 59 nS
   Cossⓘ - Capacitancia de salida: 1000 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO252
     - Selección de transistores por parámetros

 

AP3N4R5H Datasheet (PDF)

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 ap3n4r5h.pdf pdf_icon

AP3N4R5H

AP3N4R5HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test BVDSS 30V Integrated SKY Diode RDS(ON) 4.5m Low On-resistanceG RoHS Compliant & Halogen-FreeSDescriptionGAP4604 series arefrom Advanced Power innovated designAP3N4R5 seriesare fromAdvanced Power innovated design andDSTO-252(H)a

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 ap3n4r5m.pdf pdf_icon

AP3N4R5H

AP3N4R5MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VDD Integrated SKY Diode D RDS(ON) 4.5mD Surface Mount Device ID3 18.7AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP3N4R5 series are from Advanced Power innovated design andsilicon process technology to ac

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 ap3n4r0p.pdf pdf_icon

AP3N4R5H

AP3N4R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designand

 8.2. Size:243K  ape
 ap3n4r0h.pdf pdf_icon

AP3N4R5H

AP3N4R0HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 4m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N4R0 seriesare fromAdvanced Power innovated designG

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SRN1860FD | IPB60R280P6 | WMK071N15HG2 | PHP36N06E | JCS630FA | IRHMK57260SE | BSO080P03NS3G

 

 
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