AP3N2R8H Todos los transistores

 

AP3N2R8H MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP3N2R8H

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 125 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 158 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 63 nS

Cossⓘ - Capacitancia de salida: 1100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm

Encapsulados: TO252

 Búsqueda de reemplazo de AP3N2R8H MOSFET

- Selecciónⓘ de transistores por parámetros

 

AP3N2R8H datasheet

 ..1. Size:206K  ape
 ap3n2r8h.pdf pdf_icon

AP3N2R8H

AP3N2R8H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S G Description D S TO-252(H) AP4604 series arefrom Advanced Power innovated design AP3N2R8 seriesare fromAdvanced Power

 7.1. Size:167K  ape
 ap3n2r8p.pdf pdf_icon

AP3N2R8H

AP3N2R8P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching Characteristic G G RoHS Compliant & Halogen-Free S S Description AP4604 series arefrom Advanced Power innovated design AP3N2R8 seriesare fromAdvanced Power innovated design a

 7.2. Size:161K  ape
 ap3n2r8mt.pdf pdf_icon

AP3N2R8H

AP3N2R8MT Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D 100% Rg & UIS Test BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Ultra Low On-resistance ID4 105A RoHS Compliant & Halogen-Free G D D D Description S D AP3N2R8 series are from Advanced Power innovated design and silicon process technology to achieve the lowe

 8.1. Size:163K  ape
 ap3n2r2mt.pdf pdf_icon

AP3N2R8H

AP3N2R2MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30V D Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistance G RoHS Compliant & Halogen-Free D S D D Description D AP3N2R2 series are from Advanced Power innovated design and silicon process technology to achieve the lowest po

MOSTRAR MÁS

Otros transistores... AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , IRF1010E , AP3P7R0ES , AP3P6R0S , AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , AP30T10GS .

History: 2SJ0582 | 2SK2975 | 15N05 | JMH65R600MK | NCE60R360 | AP3P6R0S | MC3406

 

 

 

 

↑ Back to Top
.