All MOSFET. AP3N2R8H Datasheet

 

AP3N2R8H Datasheet and Replacement


   Type Designator: AP3N2R8H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 158 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 63 nS
   Cossⓘ - Output Capacitance: 1100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm
   Package: TO252
 

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AP3N2R8H Datasheet (PDF)

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 ap3n2r8h.pdf pdf_icon

AP3N2R8H

AP3N2R8HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSGDescriptionDSTO-252(H)AP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power

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 ap3n2r8p.pdf pdf_icon

AP3N2R8H

AP3N2R8PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Fast Switching CharacteristicGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series arefrom Advanced Power innovated designAP3N2R8 seriesare fromAdvanced Power innovated designa

 7.2. Size:161K  ape
 ap3n2r8mt.pdf pdf_icon

AP3N2R8H

AP3N2R8MTHalogen-Free ProductAdvanced Power N-CHANNEL MOSFET WITH SCHOTTKYElectronics Corp. DIODED 100% Rg & UIS Test BVDSS 30V Simple Drive Requirement RDS(ON) 2.8m Ultra Low On-resistance ID4 105A RoHS Compliant & Halogen-FreeGDDDDescription SDAP3N2R8 series are from Advanced Power innovated design andsilicon process technology to achieve the lowe

 8.1. Size:163K  ape
 ap3n2r2mt.pdf pdf_icon

AP3N2R8H

AP3N2R2MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 30VD Simple Drive Requirement RDS(ON) 2.2m Ultra Low On-resistanceG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP3N2R2 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest po

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Datasheet: AP3P7R0EI , AP3N4R0J , AP3P7R0EJB , AP3P7R0EH , AP3P050H , AP3P010H , AP3N4R5H , AP3N4R0H , IRF530 , AP3P7R0ES , AP3P6R0S , AP3N4R0S , AP3C010H , AP3A020Y , AP3990S , AP3700Y , AP30T10GS .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - AP3N2R8H MOSFET datasheet

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