AP3A020Y Todos los transistores

 

AP3A020Y MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP3A020Y
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.38 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 6.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 7 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
   Paquete / Cubierta: 2928-8
     - Selección de transistores por parámetros

 

AP3A020Y Datasheet (PDF)

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 ap3a020y.pdf pdf_icon

AP3A020Y

AP3A020YHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 30VD2 Low Gate Charge RDS(ON) 20mD1D1G2 Fast Switching Performance ID3 6.5AS2 RoHS Compliant & Halogen-FreeG1S12928-8DescriptionAP3A020 series are from Advanced Power innovated designD2D1and silicon pro

 9.1. Size:179K  ape
 ap3a010am.pdf pdf_icon

AP3A020Y

AP3A010AMHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFETD2 Simple Drive Requirement BVDSS 30VD2D1 Low On-resistance RDS(ON) 10.4mD1 Fast Switching Performance ID 10.8AG2S2 RoHS Compliant & Halogen-FreeG1S1SO-8DescriptionAP3A010A series are from Advanced Power innovated designD2D1and silicon

 9.2. Size:66K  ape
 ap3a010mt.pdf pdf_icon

AP3A020Y

AP3A010MTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 D1 D2 D2 Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.5m RoHS Compliant & Halogen-FreeD1D1D2DescriptionD2S1 G1 S2 G2AP3A010 series are from Advanced Power innovateddesign and silicon process technology to achieve the

 9.3. Size:140K  ape
 ap3a010amt.pdf pdf_icon

AP3A020Y

AP3A010AMTHalogen-Free ProductAdvanced Power DUAL N-CHANNEL ENHANCEMENTElectronics Corp. MODE POWER MOSFETD1 D1 D2 D2 Simple Drive Requirement BVDSS 30V Fast Switching Characteristic RDS(ON) 10.4m RoHS Compliant & Halogen-FreeD1D1D2DescriptionD2S1 G1 S2 G2AP3A010A series are from Advanced Power innovateddesign and silicon process technology to achieve th

MOSTRAR MÁS

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: FQI17P06TU | 2SK1336 | CSD17310Q5A | WSD4066DN | AOLF66610 | VS3618AE | SI2101

 

 
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