AP1A003P Todos los transistores

 

AP1A003P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP1A003P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 125 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 189 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 1320 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0021 Ohm
   Paquete / Cubierta: TO220
 

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AP1A003P Datasheet (PDF)

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 ap1a003p.pdf pdf_icon

AP1A003P

AP1A003PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.1m Fast Switching Characteristic ID4 120AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare from Advanced Power innovated designAP1A003series arefrom Advanced Power innovated

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AP1A003P

AP1A003GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 1.2m Low On-resistance ID 235AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP1A003 series are from Advanced Power innovated design andsilicon process technology to achi

 7.2. Size:55K  ape
 ap1a003gmt-hf.pdf pdf_icon

AP1A003P

AP1A003GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 0.99m Low On-resistance ID 260AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP1A003 series are from Advanced Power innovated design andsilicon process technology to ach

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History: WMS048NV6LG4 | WPM2341A | HM2302D | IRFB4332PBF | SM4066CSK | TK750A60F | TMA20N65H

 

 
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