AP1A003P Datasheet and Replacement
Type Designator: AP1A003P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 125 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 189 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 70 nS
Cossⓘ - Output Capacitance: 1320 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: TO220
AP1A003P substitution
AP1A003P Datasheet (PDF)
ap1a003p.pdf

AP1A003PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 2.1m Fast Switching Characteristic ID4 120AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 seriesare from Advanced Power innovated designAP1A003series arefrom Advanced Power innovated
ap1a003gmt.pdf

AP1A003GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 1.2m Low On-resistance ID 235AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP1A003 series are from Advanced Power innovated design andsilicon process technology to achi
ap1a003gmt-hf.pdf

AP1A003GMT-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 30VD SO-8 Compatible with Heatsink RDS(ON) 0.99m Low On-resistance ID 260AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP1A003 series are from Advanced Power innovated design andsilicon process technology to ach
Datasheet: AP2910EC4 , AP2904EC4 , AP25N170I , AP20WN170P , AP20WN170J , AP20WN170I , AP20WN170H , AP20T15GI , 75N75 , AP18P10AGJ , AP18P10AGH , AP16T10GH , AP15T15GH , AP15P10GI , AP14SL50W , AP14SL50I , AP14SL50H .
History: 2SK633 | WML13N80M3
Keywords - AP1A003P MOSFET datasheet
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History: 2SK633 | WML13N80M3



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