AP10TN9R0P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP10TN9R0P
Código: 10TN9R0
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83.3 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 61 nC
trⓘ - Tiempo de subida: 95 nS
Cossⓘ - Capacitancia de salida: 1000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0089 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET AP10TN9R0P
AP10TN9R0P Datasheet (PDF)
ap10tn9r0p.pdf
AP10TN9R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 8.9m Fast Switching Characteristic ID 70AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN9R0 series from Advanced Power Power inno
ap10tn5r5lmt.pdf
AP10TN5R5LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN5R5L series are from Advanced Power innovated designand silicon process technology to
ap10tn010cmt.pdf
AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the
ap10tn004cmt.pdf
AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog
ap10tn004lcmt.pdf
AP10TN004LCMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004LC series are from Advanced Power innovated designand silicon process technology to ach
ap10tn028mt.pdf
AP10TN028MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 28m Lower Gate Charge ID 21AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN028 series are from Advanced Power innovated designand silicon process technology to achieve the
ap10tn030m.pdf
AP10TN030MHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VDDDD Low On-resistance RDS(ON) 30m Fast Switching Characteristic ID 6.5AGS RoHS Compliant & Halogen-FreeSSSO-8DDescriptionAP10TN030 series are from Advanced Power innovated design andsilicon process technol
ap10tn135h.pdf
AP10TN135HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1AG RoHS Compliant & Halogen-FreeSDescriptionGAP10TN135 series are from Advanced Power innovated design andDSTO-252(H)silicon process technology
ap10tn012lmt.pdf
AP10TN012LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 12m Low On-resistance ID4 62AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN012L series are from Advanced Power innovated designand silicon process technology to achieve
ap10tn028yt.pdf
AP10TN028YTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD Small Size & Lower Profile RDS(ON) 28m RoHS Compliant & Halogen-Free ID 7.5AGSDDDescriptionDDAP10TN028 series are from Advanced Power innovated design andsilicon process technology to achieve the lowest possible on
ap10tn5r5mt.pdf
AP10TN5R5MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN5R5 series are from Advanced Power innovated designand silicon process technology to ac
ap10tn135m.pdf
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ap10tn135j.pdf
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ap10tn040p.pdf
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ap10tn135n.pdf
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ap10tn6r0i.pdf
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ap10tn003p.pdf
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ap10tn6r0p.pdf
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ap10tn003i.pdf
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ap10tn040h.pdf
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ap10tn008cmt-l.pdf
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ap10tn008cmt.pdf
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ap10tn135k.pdf
AP10TN135KHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 135m Fast Switching Characteristic ID 3AG Halogen Free & RoHS Compliant ProductSDescriptionDAP10TN135 series are from Advanced Power innovated designand silicon process technology to achieve
ap10tn003r.pdf
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ap10tn135p.pdf
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ap10tn135jb.pdf
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ap10tn003s.pdf
AP10TN003SHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 200AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN003 series from Advanced Power Power innovated
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