Справочник MOSFET. AP10TN9R0P

 

AP10TN9R0P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP10TN9R0P
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83.3 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 70 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 95 ns
   Cossⓘ - Выходная емкость: 1000 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0089 Ohm
   Тип корпуса: TO220
     - подбор MOSFET транзистора по параметрам

 

AP10TN9R0P Datasheet (PDF)

 ..1. Size:204K  ape
 ap10tn9r0p.pdf pdf_icon

AP10TN9R0P

AP10TN9R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 8.9m Fast Switching Characteristic ID 70AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN9R0 series from Advanced Power Power inno

 8.1. Size:165K  ape
 ap10tn5r5lmt.pdf pdf_icon

AP10TN9R0P

AP10TN5R5LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN5R5L series are from Advanced Power innovated designand silicon process technology to

 8.2. Size:163K  ape
 ap10tn010cmt.pdf pdf_icon

AP10TN9R0P

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

 8.3. Size:161K  ape
 ap10tn004cmt.pdf pdf_icon

AP10TN9R0P

AP10TN004CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN004C series are from Advanced Power innovated designand silicon process technolog

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History: 19N10L-TMS-T | BLP042N15J-B | IPL60R185P7 | STP7N52DK3 | ME08N20-G | P2003ETF | PMBFJ212

 

 
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