AP10TN6R0P Todos los transistores

 

AP10TN6R0P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP10TN6R0P
   Código: 10TN6R0
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 104 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 95 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 70 nC
   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 630 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO220
 

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AP10TN6R0P Datasheet (PDF)

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AP10TN6R0P

AP10TN6R0PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 6m Lower On-resistance ID3 95AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN6R0 series from Advanced Power Power innovatedand

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AP10TN6R0P

AP10TN6R0IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 6m Lower On-resistance ID 53AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are are from Advanced innovated designAP10TN6R0 series from Advanced Power Power innovatedand s

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 ap10tn5r5lmt.pdf pdf_icon

AP10TN6R0P

AP10TN5R5LMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN5R5L series are from Advanced Power innovated designand silicon process technology to

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 ap10tn010cmt.pdf pdf_icon

AP10TN6R0P

AP10TN010CMTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10TN010C series are from Advanced Power innovated designand silicon process technology to achieve the

MOSTRAR MÁS

Otros transistores... AP16T10GH , AP15T15GH , AP15P10GI , AP14SL50W , AP14SL50I , AP14SL50H , AP13N50R , AP10TN9R0P , IRF730 , AP10TN6R0I , AP10TN135P , AP10TN135JB , AP10TN135J , AP10TN135H , AP10TN040P , AP10TN040H , AP10TN003S .

 

 
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