AP10TN6R0P. Аналоги и основные параметры
Наименование производителя: AP10TN6R0P
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 104 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 95 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 68 ns
Cossⓘ - Выходная емкость: 630 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: TO220
Аналог (замена) для AP10TN6R0P
- подборⓘ MOSFET транзистора по параметрам
AP10TN6R0P даташит
..1. Size:206K ape
ap10tn6r0p.pdf 

AP10TN6R0P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 6m Lower On-resistance ID3 95A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN6R0 series from Advanced Power Power innovated and
5.1. Size:219K ape
ap10tn6r0i.pdf 

AP10TN6R0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 6m Lower On-resistance ID 53A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN6R0 series from Advanced Power Power innovated and s
8.1. Size:165K ape
ap10tn5r5lmt.pdf 

AP10TN5R5LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN5R5L series are from Advanced Power innovated design and silicon process technology to
8.2. Size:163K ape
ap10tn010cmt.pdf 

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the
8.3. Size:161K ape
ap10tn004cmt.pdf 

AP10TN004CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 4.8m Ultra Low On-resistance ID 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004C series are from Advanced Power innovated design and silicon process technolog
8.4. Size:163K ape
ap10tn004lcmt.pdf 

AP10TN004LCMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 4.8m Ultra Low On-resistance ID5 105A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN004LC series are from Advanced Power innovated design and silicon process technology to ach
8.5. Size:163K ape
ap10tn028mt.pdf 

AP10TN028MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 28m Lower Gate Charge ID 21A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN028 series are from Advanced Power innovated design and silicon process technology to achieve the
8.6. Size:222K ape
ap10tn030m.pdf 

AP10TN030M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D D D Low On-resistance RDS(ON) 30m Fast Switching Characteristic ID 6.5A G S RoHS Compliant & Halogen-Free S S SO-8 D Description AP10TN030 series are from Advanced Power innovated design and silicon process technol
8.7. Size:201K ape
ap10tn135h.pdf 

AP10TN135H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description G AP10TN135 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology
8.8. Size:162K ape
ap10tn012lmt.pdf 

AP10TN012LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 12m Low On-resistance ID4 62A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN012L series are from Advanced Power innovated design and silicon process technology to achieve
8.9. Size:184K ape
ap10tn028yt.pdf 

AP10TN028YT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Small Size & Lower Profile RDS(ON) 28m RoHS Compliant & Halogen-Free ID 7.5A G S D D Description D D AP10TN028 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on
8.10. Size:165K ape
ap10tn5r5mt.pdf 

AP10TN5R5MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN5R5 series are from Advanced Power innovated design and silicon process technology to ac
8.11. Size:222K ape
ap10tn135m.pdf 

AP10TN135M Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D D Fast Switching Characteristic D RDS(ON) 135m D Low Gate Charge ID 3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology t
8.12. Size:166K ape
ap10tn135j.pdf 

AP10TN135J Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description AP10TN135 series are from Advanced Power innovated design and G D S silicon process technology to achieve
8.13. Size:202K ape
ap10tn040p.pdf 

AP10TN040P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 31.5A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN040 series from Advanced Power Power inn
8.14. Size:188K ape
ap10tn135n.pdf 

AP10TN135N Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 100V D Fast Switching Characteristic RDS(ON) 135m Low Gate Charge ID 3A S RoHS Compliant & Halogen-Free SOT-23 G Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve the
8.15. Size:206K ape
ap10tn003p.pdf 

AP10TN003P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Fast Switching Characteristic ID4 200A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN003 series from Advanced Power Power inno
8.16. Size:218K ape
ap10tn003i.pdf 

AP10TN003I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 80A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN003 series from Advanced Power Power innovated
8.17. Size:203K ape
ap10tn040h.pdf 

AP10TN040H Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 40m Fast Switching Characteristic ID 32.7A G RoHS Compliant & Halogen-Free S Description G AP10TN040 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology
8.18. Size:204K ape
ap10tn9r0p.pdf 

AP10TN9R0P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 8.9m Fast Switching Characteristic ID 70A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN9R0 series from Advanced Power Power inno
8.19. Size:317K ape
ap10tn008cmt-l.pdf 

AP10TN008CMT-L Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN008C series are from Advanced Power innovated design and silicon process technology to achie
8.20. Size:162K ape
ap10tn008cmt.pdf 

AP10TN008CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 7.9m Ultra Low On-resistance ID 75A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN008C series are from Advanced Power innovated design and silicon process technology to achieve
8.21. Size:141K ape
ap10tn135k.pdf 

AP10TN135K Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 100V Lower Gate Charge RDS(ON) 135m Fast Switching Characteristic ID 3A G Halogen Free & RoHS Compliant Product S Description D AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve
8.22. Size:209K ape
ap10tn003r.pdf 

AP10TN003R Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Fast Switching Characteristic ID4 200A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN003 series from Advanced Power Power inno
8.23. Size:70K ape
ap10tn135p.pdf 

AP10TN135P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve the lowe
8.24. Size:142K ape
ap10tn135jb.pdf 

AP10TN135JB Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 135m Fast Switching Characteristic ID 8.1A G RoHS Compliant & Halogen-Free S Description AP10TN135 series are from Advanced Power innovated design and silicon process technology to achieve the low
8.25. Size:217K ape
ap10tn003s.pdf 

AP10TN003S Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 3m Ultra Low On-resistance ID4 200A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN003 series from Advanced Power Power innovated
Другие MOSFET... AP16T10GH
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History: JMPF8N60BJ
| BSZ060NE2LS
| NTD4963N-1G