AP10TN6R0I Todos los transistores

 

AP10TN6R0I MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AP10TN6R0I

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 32.9 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 53 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 68 nS

Cossⓘ - Capacitancia de salida: 630 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO220F

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AP10TN6R0I datasheet

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AP10TN6R0I

AP10TN6R0I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 6m Lower On-resistance ID 53A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN6R0 series from Advanced Power Power innovated and s

 5.1. Size:206K  ape
ap10tn6r0p.pdf pdf_icon

AP10TN6R0I

AP10TN6R0P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 6m Lower On-resistance ID3 95A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are are from Advanced innovated design AP10TN6R0 series from Advanced Power Power innovated and

 8.1. Size:165K  ape
ap10tn5r5lmt.pdf pdf_icon

AP10TN6R0I

AP10TN5R5LMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D SO-8 Compatible with Heatsink RDS(ON) 5.5m Ultra Low On-resistance ID4 100A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN5R5L series are from Advanced Power innovated design and silicon process technology to

 8.2. Size:163K  ape
ap10tn010cmt.pdf pdf_icon

AP10TN6R0I

AP10TN010CMT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 10m Lower On-resistance ID 49A G RoHS Compliant & Halogen-Free D S D D Description D AP10TN010C series are from Advanced Power innovated design and silicon process technology to achieve the

Otros transistores... AP15T15GH , AP15P10GI , AP14SL50W , AP14SL50I , AP14SL50H , AP13N50R , AP10TN9R0P , AP10TN6R0P , STP65NF06 , AP10TN135P , AP10TN135JB , AP10TN135J , AP10TN135H , AP10TN040P , AP10TN040H , AP10TN003S , AP10TN003R .

History: DN3535

 

 

 

 

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