AP10N012IN Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AP10N012IN 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28.4 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 35.4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 85 nS
Cossⓘ - Capacitancia de salida: 710 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0125 Ohm
Encapsulados: TO220F-NL
📄📄 Copiar
Búsqueda de reemplazo de AP10N012IN MOSFET
- Selecciónⓘ de transistores por parámetros
AP10N012IN datasheet
ap10n012in.pdf
AP10N012IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desi
ap10n012i.pdf
AP10N012I Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desig
ap10n012mt.pdf
AP10N012MT Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100V D Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 43A G RoHS Compliant & Halogen-Free D S D D Description D AP10N012 series are from Advanced Power innovated design and silicon process technology to achieve the lo
ap10n012p.pdf
AP10N012P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated design
Otros transistores... AP10N9R0R, AP10N9R0I, AP10N7R5H, AP10N6R0S, AP10N4R5S, AP10N4R5P, AP10N4R5I, AP10N012P, IRF3205, AP10N012I, AP10N012H, AP10C325Y, AP09T10GH, AP09N20BGH, AP0603GH, AP05N50EJ, AP05N50EH
History: AP6G04S | MTB160N25J3 | SI6404DQ | AP10N4R5S | MTA090N02KC3 | PMZ950UPEL
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65 | BCT7N65 | BCT20N65 | ASDM30P100KQ | ASDM30N90Q | ASDM30N75KQ | ASDM30N150Q
Popular searches
2sc2058 | a1693 datasheet | bdw94c equivalent | c2389 | c495 transistor | c5242 reemplazo | d667 transistor datasheet | hy1d datasheet
