Справочник MOSFET. AP10N012IN

 

AP10N012IN Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: AP10N012IN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 710 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
   Тип корпуса: TO220F-NL
     - подбор MOSFET транзистора по параметрам

 

AP10N012IN Datasheet (PDF)

 ..1. Size:255K  ape
ap10n012in.pdfpdf_icon

AP10N012IN

AP10N012INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desi

 5.1. Size:219K  ape
ap10n012i.pdfpdf_icon

AP10N012IN

AP10N012IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desig

 6.1. Size:70K  ape
ap10n012mt.pdfpdf_icon

AP10N012IN

AP10N012MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 43AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10N012 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

 6.2. Size:203K  ape
ap10n012p.pdfpdf_icon

AP10N012IN

AP10N012PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated design

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: ZXMN0545G4 | SE4060 | IPA600N25NM3S

 

 
Back to Top

 


 
.