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AP10N012IN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: AP10N012IN
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 28.4 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 35.4 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 85 ns
   Cossⓘ - Выходная емкость: 710 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
   Тип корпуса: TO220F-NL

 Аналог (замена) для AP10N012IN

 

 

AP10N012IN Datasheet (PDF)

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 ap10n012in.pdf

AP10N012IN AP10N012IN

AP10N012INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desi

 5.1. Size:219K  ape
 ap10n012i.pdf

AP10N012IN AP10N012IN

AP10N012IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desig

 6.1. Size:70K  ape
 ap10n012mt.pdf

AP10N012IN AP10N012IN

AP10N012MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 43AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10N012 series are from Advanced Power innovated design andsilicon process technology to achieve the lo

 6.2. Size:203K  ape
 ap10n012p.pdf

AP10N012IN AP10N012IN

AP10N012PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated design

 6.3. Size:241K  ape
 ap10n012h.pdf

AP10N012IN AP10N012IN

AP10N012HHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48AGG RoHS Compliant & Halogen-FreeSSDescriptionGAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desi

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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