AP10N012IN - Даташиты. Аналоги. Основные параметры
Наименование производителя: AP10N012IN
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 28.4 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 35.4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 85 ns
Cossⓘ - Выходная емкость: 710 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.0125 Ohm
Тип корпуса: TO220F-NL
Аналог (замена) для AP10N012IN
AP10N012IN Datasheet (PDF)
ap10n012in.pdf

AP10N012INHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desi
ap10n012i.pdf

AP10N012IHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated desig
ap10n012mt.pdf

AP10N012MTHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET 100% Rg & UIS Test BVDSS 100VD Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 43AG RoHS Compliant & Halogen-FreeDSDDDescriptionDAP10N012 series are from Advanced Power innovated design andsilicon process technology to achieve the lo
ap10n012p.pdf

AP10N012PHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETD 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 48AGG RoHS Compliant & Halogen-FreeSSDescriptionAP4604 series are from AdvancedPower innovated designAP10N012 series are fromAdvanced Power innovated design
Другие MOSFET... AP10N9R0R , AP10N9R0I , AP10N7R5H , AP10N6R0S , AP10N4R5S , AP10N4R5P , AP10N4R5I , AP10N012P , IRF3205 , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , AP0603GH , AP05N50EJ , AP05N50EH .
History: BSZ0902NS | CEM3172 | SI3134KDW | NTMFD4C85N | 2SK3516-01L | BSC079N10NSG | 2SK2235
History: BSZ0902NS | CEM3172 | SI3134KDW | NTMFD4C85N | 2SK3516-01L | BSC079N10NSG | 2SK2235



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