AP0603GH Todos los transistores

 

AP0603GH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AP0603GH
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 72 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 325 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO252

 Búsqueda de reemplazo de MOSFET AP0603GH

 

Principales características: AP0603GH

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 ap0603gh.pdf pdf_icon

AP0603GH

AP0603GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 72A G RoHS Compliant & Halogen-Free S Description AP0603 series are from Advanced Power innovated design and silicon process technology to achieve the lowest poss

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AP0603GH

AP0603GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance D BVDSS 30V Simple Drive Requirement RDS(ON) 6m Fast Switching Characteristic ID 72A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D

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 ap0603gm.pdf pdf_icon

AP0603GH

AP0603GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 16.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP0603 series are from Advanced Power innovated design and silicon process technology

 7.2. Size:94K  ape
 ap0603gm-hf.pdf pdf_icon

AP0603GH

AP0603GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 6m D Fast Switching Characteristic ID 16.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fa

MOSTRAR MÁS

Otros transistores... AP10N4R5I , AP10N012P , AP10N012IN , AP10N012I , AP10N012H , AP10C325Y , AP09T10GH , AP09N20BGH , 50N06 , AP05N50EJ , AP05N50EH , AP05N20GJ , AP05N20GI , AP05N20GH , AP04N70BS-H , AP02N90JB , AP02N90J .

History: HM8P02MR | 4N60KL-TF2-T

 

 
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